Xiaohang Li

Associate Professor, Electrical Engineering
Computer, Electrical and Mathematical Science and Engineering Division

Advanced Semiconductor Laboratory


Education Profile

  • ​​​​Ph.D., Electrical Engineering (minor in Physics), Georgia Institute of Technology 2015
  • M.S., Electrical Engineering, Lehigh University 2011
  • B.S., Applied Physics, Huazhong University of Science and Technology, 2008

Research Interests

​Professor Li is interested in the investigation of growth, simulation, fabrication, and characterization of III-nitride structures for next-generation devices.

The devices of particular interest include LED, laser, solar cells, transistors, and sensors. Because of excellent properties of III-nitrides, these devices are expected to become the enabling technologies to revolutionize energy, communication, biochemical, biomedical, and data storage industries and many others.

Professor Li’s research activities are highly interdisciplinary. They involve electrical engineering, applied physics, material science, chemical engineering and other related disciplines.

Selected Publications

  • X. Li, et al., “Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells”, Appl. Phys. Lett., 107, 241109 (2015).
  • X. Li, et al., “Demonstration of transverse-magnetic dominant deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers on sapphire substrates”, Appl. Phys. Lett., 106, 041115 (2015).
  • X. Li, et al., “Temperature dependence of crystalline quality of AlN layer grown on sapphire substrate by metalorganic chemical vapor deposition”, J. Cryst. Growth, 414, 76 (2015).
  • X. Li, et al., “Growth of high-quality AlN layer on sapphire substrate at relatively low temperatures by metalorganic chemical vapor deposition”, Phys. Status Solidi B, 252, 5 (2015).
  • X. Li, et al., “Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates”, Appl. Phys. Lett., 105, 141106 (2014).