Xiaohang Li

Assistant Professor, Electrical Engineering

Computer, Electrical and Mathematical Science and Engineering Division

Advanced Semiconductor Laboratory


Education Profile

  • ​​​​​Ph.D., Electrical Engineering (minor in Physics), Georgia Institute of Technology 2015
  • M.S., Electrical Engineering, Lehigh University 2011
  • B.S., Applied Physics, Huazhong University of Science and Technology, 2008

Research Interests

​Professor Li is interested in the investigation of growth, simulation, fabrication, and characterization of III-nitride structures for next-generation devices.

The devices of particular interest include LED, laser, solar cells, transistors, and sensors. Because of excellent properties of III-nitrides, these devices are expected to become the enabling technologies to revolutionize energy, communication, biochemical, biomedical, and data storage industries and many others.

Professor Li’s research activities are highly interdisciplinary. They involve electrical engineering, applied physics, material science, chemical engineering and other related disciplines.

Selected Publications

  • K. Liu, H. Sun, F. AlQatari, W. Guo, X. Liu, J. Li, C. GT. Castanedo, and X. Li, "Wurtzite BA1N and BGaN alloys for heterointerface polarization engineering," Appl. Phys. Lett. 111, 222106 (2017).
  • H. Sun, C.G.T. Castanedo, K. Liu, K.-H. Li, W. Guo, R. Lin, X. Liu, J. Li, and X. Li, "Valence and conduction band offsets of β-Ga203/A1N heterojunction," Appl. Phys. Lett. 111, 162105 (2017).
  • H. Sun, Y. Park, K.-H. Li, C.G.T. Castanedo, A.S. Alowayed, T. Detchprohm, R.D. Dupuis, and X. Li, "Band alignment of B0.14A10.86N / A10.7Ga0.3N heterojunction," Appl. Phys. Lett. 111, 122106 (2017).
  • H. Sun, F. Wu, Y.J. Park, T.M. Al tahtamouni, K.-H. Li, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li,"Influence of TMA1 preflow on A1N epitaxy on sapphire," Appl. Phys. Lett. 110, 192106 (2017).
  • N. Alfaraj, S. Mitra, F. Wu, I. Ajia, B. Janjua, A. Prabaswara, R. A. Aljefri, H. Sun, T. K. Ng, B.S. Ooi, I.S. Roqan, and X. Li, "Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires," Appl. Phys. Lett. 110, 161110 (2017).