Xiaohang Li

Associate Professor, Electrical and Computer Engineering

Computer, Electrical and Mathematical Science and Engineering Division

Advanced Semiconductor Laboratory


Education Profile

  • ​​​​​Ph.D., Electrical Engineering minor in Physics with the highest honor Edison Prize, Georgia Institute of Technology 2015
  • M.S., Electrical Engineering, Lehigh University 2011
  • B.S., Applied Physics with the highest honor, Huazhong University of Science and Technology, 2008

Research Interests

Professor Li is interested in the ultrawide bandgap and wide bandgap semiconductors. He is focused on growth, simulation, fabrication, and characterization of next-generation III-nitride and III-oxide devices. Professor Li's research has resulted in many pioneering and cutting-edge results widely recognized and awarded by IEEE, SPIE, American Association of Crystal Growth, and Edison Innovation Foundation.

The devices of particular interest include LED, laser, high power devices, high frequency devices, and sensors. These devices are expected to become the enabling technologies to revolutionize energy, communication, health, sensing, and many others which are crucial for the sustainable future of human society.

Professor Li's research activities are highly interdisciplinary. They involve students and researchers from electrical engineering, applied physics, material science, machine learning, and other related disciplines. They are supported by state-of-the-art facilities including and not limited to: MOCVD, PLD, ALD, photolithography, e-beam lithography, PL, TEM, XRD, Raman, XPS, SIMS, RBS, supercomputer in his lab and at KAUST. 

Selected Publications

  • "Graded-Index Separated Confinement Heterostructure AlGaN Nanowires: Towards Ultraviolet Laser Diodes Implementation," ACS Photonnics. 5, 3305 (2018).
  • "Lateral-Polarity-Structure of AlGaN Quantum Wells: A Promising Approach for Enhancing the Ultraviolet Luminescence," Advanced Functional Material 28, 1802395 (2018).
  • "Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations," Photonics Research 6, 124 (2018).
  • "HCl flow-induced phase change of α-, β- and ε-Ga2O3 films grown by MOCVD," Crystal Growth & Design 18, 2370 (2018).
  • "Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes," ACS Photonics 5, 964 (2018).