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Xiaohang Li

Associate Professor, Electrical and Computer Engineering

Principal Investigator, Advanced Semiconductor Laboratory

Computer, Electrical and Mathematical Science and Engineering Division
Email icon xiaohang.li@kaust.edu.sa

The wide bandgap semiconductor has been revolutionizing the human society in numerous aspects, including energy, food, water, environment, and information. Our research aims to investigate fundamental science and create more cutting-edge technologies for a better world and future.

Program Affiliations

Biography

Professor Xiaohang Li has extensive research experience in III-nitride and III-oxide (ultra)wide bandgap semiconductors. Prior to KAUST, Li received his Bachelor degree in Applied Physics from Huazhong University of Science and Technology, China, his Master's degree in Electrical Engineering from Lehigh University, U.S., and his Ph.D. degree in Electrical Engineering from Georgia Institute of Technology, U.S.

Since joining KAUST, Li has advised more than 100 students, and led his Advanced Semiconductor Laboratory (ASL) in making many important and pioneering contributions to semiconductor research. Prof Li and his ASL team focus on the fundamental and applied research of ultrawide and wide-bandgap semiconductor materials, devices, physics and hardware. The ASL team aims to leverage these technologies to revolutionize the energy, communications, and health industries crucial for the sustainability of human society.

Research Interests

Professor Li has extensive research experience in III-nitride and III-oxide (ultra)wide bandgap semiconductors. He focuses his interdisciplinary research activities on investigating the growth, simulation, fabrication and characterization of III-nitride structures for next-generation devices. Devices of particular interest include LEDs, lasers, transistors and next-generation CMOS ICs.
Keyword tag icon
wide bandgap semiconductor optoelectronics power electronics

Education Profile

  • Ph.D., Electrical Engineering minor in Physics with the highest honor Edison Prize, Georgia Institute of Technology 2015

  • M.S., Electrical Engineering, Lehigh University 2011

  • B.S., Applied Physics with the highest honor, Huazhong University of Science and Technology, 2008

Awards and Recognitions

  • News Features, Semiconductor Today, 2019

  • IEEE North Jersey Section ED/CAS MTT/AP Chapters Award, 2019

  • Harold M. Manasevit Young Investigator Award, American Association of Crystal Growth (AACG), 2018

  • Official Nominee of KAUST Distinguished Teaching Award, KAUST, 2018

  • Elected Representative in University Academic Counsel, KAUST, 2017 - 2019

  • Title of the Weekly News Letter (1), (2), Compound Semiconductor, 2017

  • Editor’s Select, Applied Physics Letter, 2016

  • Georgia Tech representative, Global Young Scientist Summit, 2015

  • Graduate Student Fellowship, IEEE Photonics Society, 2014

  • Steve W. Chaddick Fellowship, Georgia Institute of Technology, 2014

  • Anne Robinson Clough International Student Grant, Georgia Institute of Technology, 2014

  • D. J. Lovell Scholarship, SPIE, 2013

  • Edison Prize, Georgia Institute of Technology, Edison Innovation Foundation, 2013

  • Member of Insight Engineering & Science Program, McKinsey & Company, 2013

  • Member of Bridge to BCG Program, Boston Consulting Group, 2013

  • Most Commercialize Prize, Georgia Institute of Technology, 2013

  • Best Product Showcase Prize, Georgia Institute of Technology, 2013

  • Innovation Alley, Lehigh Valley, TEDx, 2013

  • Immigrant Innovator and Entrepreneur Awarding Ceremony, The U.S. White House, 2013

  • Best Customer Discovery Award, Georgia Tech, 2012

  • First Place of Elevator Pitch Competition, Georgia Institute of Technology, 2012

  • Michael W Levin’87 Advanced Technology Award, Lehigh University, 2012

  • National Scholarship, China, 2008

Publications

  1. "Graded-Index Separated Confinement Heterostructure AlGaN Nanowires: Towards Ultraviolet Laser Diodes Implementation," ACS Photonics. 5, 3305 (2018).

  2. "Lateral-Polarity-Structure of AlGaN Quantum Wells: A Promising Approach for Enhancing the Ultraviolet Luminescence," Advanced Functional Material 28, 1802395 (2018).

  3. “Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations,” Photonics Research 6, 124 (2018).

  4. "HCl flow-induced phase change of α-, β- and ε-Ga2O3 films grown by MOCVD," Crystal Growth & Design 18, 2370 (2018).

  5. "Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes," ACS Photonics 5, 964 (2018).

Research Areas

  • Electrical and Computer Engineering

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