Professor Li is interested in the ultrawide bandgap and wide bandgap semiconductors. He is focused on growth, simulation, fabrication, and characterization of next-generation III-nitride and III-oxide devices. Professor Li's research has resulted in many pioneering and cutting-edge results widely recognized and awarded by IEEE, SPIE, American Association of Crystal Growth, and Edison Innovation Foundation.

The devices of particular interest include LED, laser, high power devices, high frequency devices, and sensors. These devices are expected to become the enabling technologies to revolutionize energy, communication, health, sensing, and many others which are crucial for the sustainable future of human society.

Professor Li's research activities are highly interdisciplinary. They involve students and researchers from electrical engineering, applied physics, material science, machine learning, and other related disciplines. They are supported by state-of-the-art facilities including and not limited to: MOCVD, PLD, ALD, photolithography, e-beam lithography, PL, TEM, XRD, Raman, XPS, SIMS, RBS, supercomputer in his lab and at KAUST.