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Mario Lanza

Associate Professor, Material Science and Engineering

Physical Science and Engineering Division


Professor Lanza’s group website

Affiliations

Education Profile

  • ​Postdoctoral fellow, Stanford University, 2012-2013
  • Postdoctoral fellow, Peking University, 2010-2011
  • Ph.D. Electronic Engineering, Universitat Autonoma de Barcelona, 2010
  • M.S. Micro and Nanotechnology, Universitat Autonoma de Barcelona, 2007
  • B.S. Electronic Engineering, Universitat Autonoma de Barcelona, 2006

Research Interests

​Professor Lanza's research focuses on the integration of two-dimensional (2D) materials in solid-state nano/micro-electronic devices and circuits, with special emphasis on memristive crossbar arrays and their use to build artificial neural networks. He puts special effort on using fabrication methods compatible with the industry, and to characterize the yield and variability of large amounts of devices in a statistical manner. He is one of the world leaders on the study of hexagonal boron nitride (h-BN), as well as many other ultra-thin dielectrics for electronic devices (SiO2, HfO2, Al2O3). He is famous for his expertise on nanoelectronic characterization of multiple materials and devices using scanning probe microscopy (SPM).

Selected Publications

  • Mario Lanza*, Abu Sebastian, Wei D. Lu, Manuel Le Gallo, Meng-Fan Chang, Deji Akinwande, Francesco M. Puglisi, Husam N. Alshareef, Ming Liu, Juan B. Roldan. Memristive technologies for data storage, computation, encryption, and radio-frequency communication. Science, 376, eabj9979, 2022.
  • Kaichen Zhu, Chao Wen, Areej A Aljarb, Fei Xue, Xiangming Xu, Vincent Tung, Xixiang Zhang, Husam N Alshareef, Mario Lanza*. The development of integrated circuits based on two-dimensional materials. Nature Electronics, 4, 775–785, 2021.
  • Shaochuan Chen, Mohammad Reza Mahmoodi, Yuanyuan Shi, Chandreswar Mahata, Bin Yuan, Xianhu Liang, Chao Wen, Fei Hui, Deji Akinwande, Dmitri B. Strukov, Mario Lanza*. Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks. Nature Electronics 3, 638–645, 2020.
  • Fei Hui, Mario Lanza*. Scanning probe microscopy for advanced nanoelectronics. Nature Electronics, 2, 221-229, 2019.
  • Yuanyuan Shi, Xianhu Liang, Bin Yuan, Victoria Chen, Haitong Li, Fei Hui, Zhouchangwan Yu, Fang Yuan, Eric Pop, H.-S. Philip Wong*, Mario Lanza*. Electronic synapses made of layered two-dimensional materials. Nature Electronics 1, 458–465, 2018.