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Affiliations

• Electrical and Computer Engineering

Education Profile

• ​​​PhD., Massachusetts Institute of Technology, USA, 2013
  
• MSc, University of Malaya, Malaysia, 2008
• BSc, Sharif University of Technology, Iran, 2006​

Research Interests

Professor Fariborzi's research interests include design, modeling and optimization of ultra-low power integrated circuits and systems (mixed-signal/digital), implemented with emerging switching technologies. In particular, he's interested in a fusion of the mainstream switching devices (CMOS) and a range of novel solutions, such as electromechanical nanorelays and nanoresonators, spintronic-based devices, memristors. He's also exploring the application of such devices and systems in the field of biomedical instrumentation and wireless, wearable healthcare.

Selected Publications

• MA. AlHafiz, S. Ilyas, S. Ahmed, MI. Younis, H. Fariborzi, “A Microbeam Resonator with Partial Electrodes for Logic and Memory Elements,” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2 (3) 83-92, Dec 2017.
  
• D. Berco, U. Chand, H. Fariborzi, “A Numerical Analysis and Experimental Demonstration of a Low Degradation Conductive Bridge Resistive Memory Device,” Journal of Applied Physics, 122 (16), 152-164, Oct 2017
• U. Chand, M. Alawein, H. Fariborzi, “Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer,” Electrochemical Science and Technology (ECS) Transactions, 77 (11), 1971-1976, July 2017.
• A. Hafiz, S. Tella, N. Alcheikh, H. Fariborzi, M. Younis, “Axially modulated arch resonator for logic and memory applications,”, Journal of Mechatronics, Dec 2017.
• U. Chand, D. Berco, R. Li, M. Alawein, H. Fariborzi, “Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device” IEEE Electron Devices Technology and Manufacturing Conference (EDTM-2018) Kobe, Japan, 2018.
• S. Wasef, S. Amara, M. Alawein, H. Fariborzi,” Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy,” IEEE Electron Devices Technology and Manufacturing Conference (EDTM-2018) Kobe, Japan, 2018.
• M Alawein, H Fariborzi, “A General Circuit Model for Spintronic Devices under Electric and Magnetic Fields,” in Proceedings of IEEE European Solid-State Device Research Conference (ESSDERC 2017), Leuven, Belgium.
• M. A. Hafiz, M. Younis, H. Fariborzi, “A Parity Checker Circuit Based on Microelectromechanical Resonator Logic Elements,” Physics Letters A., Jan 2017
• A. Hafiz, L. Kosuru, M. Younis , H. Fariborzi, “Microelectromechanical Resonator Based Digital Logic Elements,” European Solid State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland.
• H. Fariborzi, F. Chen, R. Nathanael, R. Lee, T.-J.K. Liu, V. Stojanovic, “Relays Do Not Leak, CMOS Does,” (invited) IEEE Design Automation Conference (DAC), Austin, TX, June 2013.
• M. Spencer, F. Chen, H. Fariborzi, R. Nathanael, C.Wang, A. Gupta, H. Kam, V. Pott, J. Jeon, T.-J. K. Liu, D. Markovic, E. Alon, and V. Stojanovic, "Demonstration of Integrated Micro-Electro-Mechanical Relay Circuits for VLSI Applications," IEEE Journal of Solid-State Circuits, 2011.
• H. Fariborzi, M. Spencer, V. Karkare, J. Jeon, R. Nathanael, C. Wang, F. Chen, H. Kam, V. Pott, T.-j. K. Liu, E. Alon, V. Stojanovic, and D. Markovic, "Analysis and demonstration of MEM-relay power gating," Custom Integrated Circuits Conference (CICC), 2010 IEEE, San Jose, CA.
• F. Chen, M. Spencer, R. Nathanael, H. Fariborzi, C.Wang, A. Gupta, H. Kam, V. Pott, J. Jeon, T.-J. K. Liu, D. Markovic, V. Stojanovic, and E. Alon, "Demonstration of Integrated Micro-Electro-Mechanical (MEM) Switch Circuits for VLSI Applications," International Solid State Circuits Conference ISSCC, San Francisco, 2010.